TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 400MHz ~ 2.2GHz |
Number of Pins | 16 Pin |
Case/Package | SSOP-16 |
Supply Current | 725 mA |
Gain | 21.5 dB |
Operating Temperature (Max) | 85 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 3800 mW |
Supply Voltage | 5 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Bulk |
Product Details
●The HMC453QS16G(E) is a high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1.6 watt MMIC power amplifier operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifier gain is typically 21.5 dB at 0.4 GHz and 8 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifier output IP3 can be optimized to +47 dBm at 0.4 GHz or +51 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/current control. The high output IP3 and PAE make the HMC453QS16G(E) ideal power amplifier for Cellular/ PCS/3G, WLL, ISM and Fixed Wireless applications.
●Applications
● GSM, GPRS & EDGE
● CDMA & W-CDMA
● CATV/Cable Modem
● Fixed Wireless & WLL
●### Features and Benefits
● Output IP3: +51 dBm
● 21.5 dB Gain @ 400 MHz
● 8 dB Gain @ 2100 MHz
● 45% PAE @ +32 dBm Pout
● +25 dBm CDMA2000
●Channel Power@ -45 dBc ACP
● Single +5V Supply
● Integrated Power Control (VPD)
● QSOP16G SMT Package: 29.4 mm²
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