| TYPE | DESCRIPTION |
|---|
| Number of Pins | 16 Pin |
| Case/Package | EP-16 |
| Power Dissipation | 2890 mW |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 2890 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
Product Details
●The HMC5805ALS6 is a GaAs pHEMT MMIC Distributed Power Amplifier which operates between DC and 40 GHz. The amplifier provides 11.5 dB of gain, 29 dBm output IP3 and +24 dBm of output power at 1 dB gain compression while requiring 175 mA from a +10 V supply. The HMC5805ALS6 is ideal for EW, ECM, Radar and test equipment applications. The HMC5805ALS6 amplifier I/Os are internally matched to 50 Ohms and the 6x6 mm SMT package is well suited for automated assembly techniques.
●Applications
● Test instrumentation
● Microwave radio and VSAT
● Military and space
● Telecom infrastructure
● Fiber optics
●### Features and Benefits
● High P1dB output power: 24.5 dBm
● High Psat output power: 27 dBm
● Gain: 11.5 dB
● Output IP3: 29 dBm
● Supply voltage: +10 V at 175 mA
● 16 lead ceramic 6x6 mm SMT package: 36 mm2
ADI
RF Amp Chip Single Power Amp 40GHz 12V 16Pin CLLCC T/R
ADI
RF Amp Chip Single Power Amp 40GHz 12V 16Pin CLLCC T/R
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