| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Positions | 2 Position |
| Drain to Source Resistance (on) (Rds) | 108 mΩ |
| Power Dissipation | 250 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 300 V |
| Rise Time | 135 ns |
| Input Capacitance (Ciss) | 1690pF @25V(Vds) |
| Input Power (Max) | 250 W |
| Fall Time | 69 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 250 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.67 mm |
| Size-Width | 11.33 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The FDB28N30TM is a N-channel enhancement-mode Power FET produced using Fairchild"s proprietary planar stripe DMOS technology. This advanced technology has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. It is suited for high efficient switched mode power supplies and active power factor correction.
● Improved dV/dt capability
● 100% Avalanche tested
● Fast switching
● 39nC Typical low gate charge
● 35pF Typical low Crss
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