TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 0Hz ~ 1GHz |
Number of Pins | 3 Pin |
Supply Voltage (DC) | 5.00V (max) |
Case/Package | SOT-89-3 |
Power Rating | 0.59 W |
Supply Current | 110 mA |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Power Dissipation | 0.59 W |
Output Power | 22 dBm |
Gain | 17 dB |
Operating Temperature (Max) | 85 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 590 mW |
Supply Voltage | 5 V |
Supply Voltage (Max) | 5 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | End of Life |
Packaging | Cut Tape (CT) |
Size-Length | 4.6 mm |
Size-Width | 2.59 mm |
Size-Height | 1.6 mm |
Operating Temperature | -40℃ ~ 85℃ |
The HMC580ST89E is an InGaP heterojunction bipolar transistor (HBT) Gain Block MMIC Amplifier which operates between DC to 1GHz. The amplifier can be used as a cascadable 50R RF or IF gain stage as well as a PA or LO driver with up to +26dBm output power. The HMC580ST89(E) offers 22dB of gain with a +37dBm output IP3 at 250MHz and can operate directly from a +5V supply. The HMC580ST89(E) exhibits excellent gain and output power stability over temperature, while requiring a minimal number of external bias components.
● 22dBm P1dB output power
● 37dBm Output IP3
● Cascadable 50R I/Os
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