TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Frequency | 200MHz ~ 4GHz |
Number of Pins | 3 Pin |
Supply Voltage (DC) | 5.00V (max) |
Case/Package | SOT-89-4 |
Supply Current | 175 mA |
Number of Positions | 3 Position |
Power Dissipation | 860 mW |
Output Power | 23 dBm |
Gain | 10 dB |
Operating Temperature (Max) | 85 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 860 mW |
Supply Voltage | 5 V |
Supply Voltage (Max) | 5 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Cut Tape (CT) |
Size-Length | 4.6 mm |
Size-Width | 2.59 mm |
Size-Height | 1.6 mm |
Operating Temperature | -40℃ ~ 85℃ |
The HMC636ST89E is a GaAs PHEMT High Linearity Low Noise Wideband Gain Block Amplifier covering 0.2 to 4.0GHz. The amplifier can be used as either a cascadable 50R gain stage, a PA Pre-Driver, a low noise amplifier or a gain block with up to +23dBm output power. This versatile gain block amplifier is powered from a single +5V supply and requires no external matching components. The internally matched topology makes this amplifier compatible with virtually any PCB material or thickness.
● 22dBm High P1dB output power
● 40dBm High output IP3
● 50R I/O"s - no external matching
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