| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 0Hz ~ 6GHz |
| Number of Pins | 32 Pin |
| Case/Package | QFN-32 |
| Supply Current | 400 mA |
| Power Dissipation | 8600 mW |
| Gain | 13 dB |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 8600 mW |
| Supply Voltage | 12 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
| Operating Temperature | -40℃ ~ 85℃ |
Product Details
●The HMC637ALP5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between DC and 6 GHz. The amplifier provides 13 dB of gain, +44 dBm output IP3 and +29 dBm of output power at 1 dB gain compression while requiring 400 mA from a +12V supply. Gain flatness is excellent at ±0.75 dB from DC - 6 GHz making the HMC637ALP5E ideal for EW, ECM, Radar and test equipment applications. The HMC637ALP5E amplifier I/Os are internally matched to 50 Ohms and the 5x5 mm QFN package is compatible with high volume SMT assembly equipment.
●Applications
● Telecom Infrastructure
● Microwave Radio & VSAT
● Military & Space
● Test Instrumentation
● Fiber Optics
●### Features and Benefits
● P1dB Output Power: +29 dBm
● Gain: 13 dB
● Output IP3: +44 dBm
● 50 Ohm Matched Input/Output
● 32 Lead 5x5mm SMT Package
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