| TYPE | DESCRIPTION |
|---|
| Number of Pins | 6 Pin |
| Case/Package | Die |
| Gain | 20 dB |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 50000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tray |
Product Details
●The HMC7149 is an 10W Gallium Nitride (GaN) MMIC Power Amplifier which operates between 6 and 18 GHz. The amplifier typically provides 20 dB of small signal gain, +40 dBm of saturated output power, and +39.5 dBm output IP3 at +28 dBm output power per tone. The HMC7149 draws 680 mA current from a +28V DC supply. The RF I/Os are matched to 50 Ohms for ease of integration into Multi-Chip-Modules (MCMs). All electrical performance data was acquired with the die eutectically attached to 1.02 mm (40 mil) thick CuMo carrier with multiple 1.0 mil diameter ball bonds connecting the die to 50 Ohm transmission lines on alumina.
●Applications
● Test Instrumentation
● General Communications
● Radar
●### Features and Benefits
● High Psat: +40 dBm
● Power Gain at Psat: +10 dB
● High Output IP3: +39.5 dBm
● Small Signal Gain: 20 dB
● Supply Voltage: +28V @ 0.680 A
● 50 Ohm Matched Input/Output
● Die Size: 3.4 x 4.5 x 0.1 mm2
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