| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -30.0 V |
| Current Rating | -1.50 A |
| Case/Package | SOT-23-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 200 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 560 mW |
| Input Capacitance | 182 pF |
| Gate Charge | 4.00 nC |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 1.50 A |
| Rise Time | 13 ns |
| Input Capacitance (Ciss) | 182pF @15V(Vds) |
| Input Power (Max) | 460 mW |
| Fall Time | 2 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 500mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.92 mm |
| Size-Width | 1.4 mm |
| Size-Height | 0.94 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The FDN358P is a P-channel Logic Level MOSFET produced using Fairchild Semiconductor advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain low gate charge for superior switching performance. It comes with high power version of industry standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. It is well suited for load switching, battery charging circuits and DC-to-DC conversion application.
● High performance Trench technology for extremely low RDS (ON)
● 4nC Typical low gate charge
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