| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Case/Package | 4-Mini-Flat |
| Rise/Fall Time | 3 µs |
| Number of Channels | 1 Channel |
| Number of Positions | 4 Position |
| Forward Voltage | 1.3V (Max) |
| Power Dissipation | 150 mW |
| Rise Time | 3 µs |
| Isolation Voltage | 3750 Vrms |
| Forward Current | 50 mA |
| Output Voltage (Max) | 80 V |
| Maximum Forward Voltage (Max) | 1.3 V |
| Forward Current (Max) | 50 mA |
| Fall Time | 3 µs |
| Operating Temperature (Max) | 100 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 150 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 100℃ |
The HMHA281 and HMHA2801 series devices consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a compact 4-pin mini-flat package. The lead pitch is 1.27 mm.
●Applications
●---
● AC-DC Merchant Power Supply
● Consumer Appliances
● Industrial Motor
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