TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Case/Package | SOT-563 |
Power Dissipation | 300 mW |
Breakdown Voltage (Collector to Emitter) | 50 V |
Continuous Collector Current | 0.15A |
hFE Min | 200 @2mA, 6V |
Input Power (Max) | 100 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 300 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Material | Silicon |
Operating Temperature | 150℃ (TJ) |
Bipolar (BJT) Transistor Array 2 NPN (Dual) 50V 150mA 80MHz 100mW Surface Mount ES6
Toshiba
3 Pages / 0.2 MByte
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Trans GP BJT NPN 50V 0.15A 6Pin SOT-26 Embossed T/R
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TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2N1G, ES6, 6 PIN, BIP General Purpose Small Signal
Toshiba
TRANSISTOR 150 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, 2-2N1G, ES6, 6 PIN, BIP General Purpose Small Signal
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