Description
●Renesas Technology’s HN58V65A series and HN58V66A series are electrically erasable and programmable EEPROM’s organized as 8192-word × 8-bit. They have realized high speed, low power consumption and high reliability by employing advanced MNOS memory technology and CMOS process and circuitry technology. They also have a 64-byte page programming function to make their write operations faster.
●Features
●• Single supply: 2.7 to 5.5 V
●• Access time:
●- 100 ns (max) at 2.7 V ≤ VCC < 4.5 V
●- 70 ns (max) at 4.5 V ≤ VCC ≤ 5.5 V
●• Power dissipation:
●- Active: 20 mW/MHz (typ)
●- Standby: 110 µW (max)
●• On-chip latches: address, data, CE, OE, WE
●• Automatic byte write: 10 ms (max)
●• Automatic page write (64 bytes): 10 ms (max)
●• Ready/Busy
●• Data polling and Toggle bit
●• Data protection circuit on power on/off
●• Conforms to JEDEC byte-wide standard
●• Reliable CMOS with MNOS cell technology
●• 105 erase/write cycles (in page mode)
●• 10 years data retention
●• Software data protection
●• Write protection by RES pin (only the HN58V66A series)
●• Operating temperature range:
●- HN58V65AI/HN58V66AI Series: −40 to +85°C
●- HN58V65A-SR/HN58V66A-SR Series: −20 to +85°C
●• There are also lead free products.
