| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | TO-263-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 12 mΩ |
| Polarity | N-CH |
| Power Dissipation | 200 W |
| Drain to Source Voltage (Vds) | 55 V |
| Breakdown Voltage (Drain to Source) | 55 V |
| Continuous Drain Current (Ids) | 75A |
| Rise Time | 60 ns |
| Fall Time | 25 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs
●These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
●Features
●• 75A, 55V
●• Simulation Models
●\- Temperature Compensated PSPICE® and SABER™ Models
●\- SPICE and SABER Thermal Impedance Models Available on the WEB at: www.fairchildsemi.com
●• Peak Current vs Pulse Width Curve
●• UIS Rating Curve
●• Related Literature
●\- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
Fairchild
11 Pages / 0.67 MByte
Fairchild
75A, 55V, 0.012Ω, N-Channel UltraFET Power MOSFETs
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