75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs
●These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge.
●Features
●• 75A, 55V
●• Simulation Models
●\- Temperature Compensated PSPICE® and SABER© Models
●\- SPICE and SABER Thermal Impedance Models Available on the WEB at: www.Intersil.com/families/models.htm
●• Peak Current vs Pulse Width Curve
●• UIS Rating Curve
●• Related Literature
●\- TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”
Intersil
12 Pages / 0.78 MByte
Fairchild
Trans MOSFET N-CH 55V 75A 3Pin(3+Tab) TO-220AB Rail
ON Semiconductor
MOSFET N-CH 55V 75A TO-220AB
Fairchild
Trans MOSFET N-CH Si 55V 75A 3Pin(3+Tab) TO-247 Rail
Intersil
75A, 55V, 0.012Ω, N-Channel UltraFET Power MOSFETs
Harris
Power Field-Effect Transistor, 70A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Fairchild
75A, 55V, 0.012Ω, N-Channel UltraFET Power MOSFETs
Harris
Power Field-Effect Transistor, 70A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247,
ON Semiconductor
MOSFET N-CH 55V 75A TO-247
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
