| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 75.0 A |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0067 Ω |
| Polarity | N-Channel |
| Power Dissipation | 515 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Continuous Drain Current (Ids) | 75.0 A |
| Input Capacitance (Ciss) | 7585pF @25V(Vds) |
| Input Power (Max) | 515 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 515W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 15.87 mm |
| Size-Width | 4.82 mm |
| Size-Height | 20.82 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The HUF75652G3 is an UltraFET N-channel Power MOSFET with ultra-low ON-resistance.
● Peak current vs. pulse width curve
● UIS rating curve
● Simulation models - Temperature compensated PSPICE® & SABER™, thermal impedance SPICE & SABER
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