The IDH10G65C5 is a thinQ!™ 5th generation 650V SiC Schottky Diode represents Infineon leading edge technology. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined with a new, more compact design and thin-wafer technology. The result is a new family of products showing improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families, ensures meeting the most stringent application requirements in this voltage range. It offers benchmark switching behaviour, no reverse recovery/no forward recovery and high surge current capability. It is used in switch mode power supply, power factor correction, solar inverter, uninterruptible power supply, server, telecom, LED/LCD TV, motor drives, PC power and HID lightning.
● Revolutionary semiconductor material-silicon carbide
● Temperature independent switching behaviour
● Pb-free lead plating
● Qualified according to JEDEC for target applications
● Breakdown voltage tested at 22mA
● Optimized for high temperature operation
● Lowest Figure of Merit QC/IF
● System efficiency improvement compared to Si diodes
● System cost/size savings due to reduced cooling requirements
● Enabling higher frequency/increased power density
● Higher system reliability due to lower operating temperature
● Reduced EMI
● High operating temperature (Tj max 175°C)
● Improved surge capability
● Higher safety margin against overvoltage and complements CoolMOS™ offer
● Improved efficiency over all load conditions
● Highly stable switching performance
● Reduced cooling requirements
● Reduced risks of thermal runaway
● Very high quality and high volume manufacturing capability
