| TYPE | DESCRIPTION |
|---|
| Case/Package | DSO |
| Number of Positions | 20 Position |
| Drain to Source Resistance (on) (Rds) | 0.055 Ω |
| Power Dissipation | 125 W |
| Threshold Voltage | 1.2 V |
| Drain to Source Voltage (Vds) | 600 V |
| Operating Temperature (Max) | 150 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
Infineon launches a GaN enhancement mode high electron mobility transistor (e‑mode HEMT) portfolio with industry‑leading field performance, enabling rugged and reliable systems at an attractive overall system cost. CoolGaN™ transistors are built with the most reliable GaN technology and are tailor‑made to deliver the market"s highest efficiency and density levels in switched mode power supplies. The application‑based qualification approach extends beyond that of other GaN products in the market.
Infineon
24 Pages / 9.64 MByte
Infineon
16 Pages / 0.52 MByte
Infineon
600V enhancement-mode Power FET Transistor
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