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IXYN30N170CV1
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IXYN30N170CV1 Datasheet PDF - IXYS Semiconductor

Manufacturer:IXYS Semiconductor
Case Package:SOT-227-4
Description:IGBT Modules 1700V/85A High Voltage XPT IGBT
Documentation:IXYN30N170CV1 Datasheet (8 Pages)
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IXYN30N170CV1 Datasheet PDF (8 Pages)
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IXYN30N170CV1 Specifications

TYPEDESCRIPTION
Case/PackageSOT-227-4
Power Dissipation680 W
Breakdown Voltage (Collector to Emitter)1700 V
Reverse recovery time160 ns
Input Power (Max)680 W
Operating Temperature (Max)175 ℃
Operating Temperature (Min)55 ℃
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IXYN30N170CV1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Operating Temperature-55℃ ~ 175℃ (TJ)
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IXYN30N170CV1 Documents

IXYN30N170CV1 Datasheet
IXYS Semiconductor
8 Pages / 0.2 MByte
IXYN30N170CV1 Other Datasheet PDF
IXYS Semiconductor
7 Pages / 0.2 MByte

IXYN30N170 Documents

IXYN30N170CV1 Datasheet PDF
IXYS Semiconductor
IGBT Modules 1700V/85A High Voltage XPT IGBT
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