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IGP03N120H2XKSA1
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IGP03N120H2XKSA1 Datasheet PDF - Infineon

Manufacturer:Infineon
Category:IGBTs
Case Package:TO-220-3
Description:Trans IGBT Chip N-CH 1200V 9.6A 62500mW 3Pin(3+Tab) TO-220 Tube
Documentation:IGP03N120H2XKSA1 Datasheet (13 Pages)IGP03N120H2XKSA1 User Reference Manual Guide (3 Pages)
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IGP03N120H2XKSA1 Datasheet PDF (13 Pages)
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IGP03N120H2XKSA1 Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-220-3
Power Dissipation62500 mW
Breakdown Voltage (Collector to Emitter)1200 V
Input Power (Max)62.5 W
Operating Temperature (Max)150 ℃
Operating Temperature (Min)-40 ℃
Power Dissipation (Max)62500 mW
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IGP03N120H2XKSA1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusObsolete
PackagingTube
Operating Temperature-40℃ ~ 150℃ (TJ)
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IGP03N120H2XKSA1 Documents

IGP03N120H2XKSA1 Datasheet
Infineon
13 Pages / 0.33 MByte
IGP03N120H2XKSA1 User Reference Manual Guide
Infineon
3 Pages / 0.36 MByte
IGP03N120H2XKSA1 Other Datasheet PDF
Infineon
1 Pages / 0.07 MByte

IGP03N120H2 Documents

IGP03N120H2 Datasheet PDF
Infineon
Insulated Gate Bipolar Transistor, 9.6A I(C), 1200V V(BR)CES, N-Channel, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, 3Pin
IGP03N120H2XKSA1 Datasheet PDF
Infineon
Trans IGBT Chip N-CH 1200V 9.6A 62500mW 3Pin(3+Tab) TO-220 Tube
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