The IGW25N120H3 is a High Speed IGBT in Trench and field-stop technology recommended in combination with SiC diode IDH15S120. The high speed device is used to reduce the size of the active components (25 to 70kHz). The high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behaviour, leading to low turn-OFF losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design.
● Designed specifically to replace planar MOSFETs in applications switching @ frequencies below 70kHz
● Low switching losses for high efficiency
● Fast switching behaviour with low EMI emissions
● Optimized diode for target applications, meaning further improvement in switching losses
● Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
● Short-circuit capability
● Excellent performance
● Low switching and conduction losses
● Very good EMI behaviour
● Small gate resistor for reduced delay time and voltage overshoot
● Best-in-class IGBT efficiency and EMI behaviour
● Packaged with and without freewheeling diode for increased design freedom
● Green product
● Halogen-free
