| TYPE | DESCRIPTION |
|---|
| Inductance | 6.8 µH |
| Test Frequency | 100 kHz |
| Resistance (DC Max) | 22.36 MΩ |
● High temperature, up to 180 °C
● Shielded construction
● Excellent DC/DC energy storage up to 1 MHz to 2 MHz
● Lowest DCR/μH, in this package size
● Handles high transient current spikes without saturation
● Ultra low buzz noise, due to composite construction
● AEC-Q200 qualified
Vishay Semiconductor
6 Pages / 0.28 MByte
Vishay Dale
Ind High Current Shielded Wirewound 6.8uH 20% 100kHz 9.1 4040 T/R
Vishay Semiconductor
Ind High Current Shielded Wirewound 6.8uH 20% 100kHz 9.1 4040 T/R
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