TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Power Dissipation | 100000 mW |
Breakdown Voltage (Collector to Emitter) | 600 V |
Reverse recovery time | 48 ns |
Input Power (Max) | 100 W |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 100000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tape & Reel (TR) |
Operating Temperature | -40℃ ~ 175℃ (TJ) |
IGBT Trench 600V 12A 100W Surface Mount PG-TO252-3
Infineon
16 Pages / 1.91 MByte
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Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3Pin(2+Tab) DPAK T/R
Infineon
Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3Pin(2+Tab) DPAK
Infineon
Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3Pin(2+Tab) DPAK T/R
Infineon
Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3Pin(2+Tab) DPAK T/R
Infineon
IGBT 600V 12A 100W TO252-3
Infineon
Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3Pin(2+Tab) DPAK T/R
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Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3Pin(2+Tab) DPAK T/R
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IGBT 600V 6A 102W TO252-3
Infineon
Trans IGBT Chip N-CH 600V 12A 100000mW Automotive 3Pin(2+Tab) DPAK T/R
Infineon
RC-Drives IGBT technology has been developed by Infineon as a cost optimized solution for sensitive consumer drives market. This basic technology provides outstanding performance for permanent magnet synchronous and brushless DC motor drives.
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