| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 255 W |
| Breakdown Voltage (Collector to Emitter) | 650 V |
| Reverse recovery time | 62 ns |
| Input Power (Max) | 255 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 255000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.36 mm |
| Size-Width | 4.57 mm |
| Size-Height | 15.95 mm |
| Operating Temperature | -40℃ ~ 175℃ (TJ) |
The IKP40N65H5 is a High Speed IGBT in TRENCHSTOP™ 5 technology co-packed with RAPID 1 fast and soft anti-parallel diode. The TRENCHSTOP™ 5 IGBT technology redefines best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the market"s high efficiency demands of tomorrow. It features best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability.
● Factor 2.5 lower Qg
● Factor 2 reduction in switching losses
● Low COES/EOSS
● Mild positive temperature coefficient VCE (sat)
● Temperature stability of Vf
● Higher power density design
● 200mV Reduction in VCE (sat)
● 50V Increase in the bus voltage possible without compromising reliability
● Green product
● Halogen-free
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18 Pages / 2.5 MByte
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270 Pages / 11.59 MByte
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73 Pages / 2.93 MByte
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48 Pages / 2 MByte
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2 Pages / 0.35 MByte
Infineon
INFINEON IKP40N65H5 IGBT Single Transistor, 40A, 1.65V, 255W, 650V, TO-220, 3Pins
Infineon
IGBT Single Transistor, 40A, 1.65V, 255W, 650V, TO-220, 3Pins
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