TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Case/Package | TO-247-3 |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Summary of Features:
● Lowest saturation voltage V CE(sat) of only 1.05V
● Low switching losses of 1.6mJ @ 25°C for 30A IGBT
● High thermal stability of electrical parameters - only 2% drift with T j increase from 25°C to 175°C
● Enhanced efficiency for 20% lower switching losses in TO-247 4pin Kelvin-Emitter package
●Benefits:
● Higher efficiency for 50Hz
● Longer lifetime and higher reliability of IGBT
● High design reliability due to stable thermal performance
●Target Applications:
● UPS
● Solar
● Welding
Infineon
16 Pages / 1.88 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
29 Pages / 1.73 MByte
Infineon
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.1V for 75A IGBT.
Infineon
Trans IGBT Chip N-CH 650V 55A 188000mW 3Pin(3+Tab) TO-247 Tube
Infineon
Transistor: IGBT; 650V; 35A; 94W; TO247-3; TRENCHSTOP™ 5; Series: H5
Infineon
Trans IGBT Chip N-CH 650V 62A 188000mW 3Pin(3+Tab) TO-247 Tube
Infineon
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.1V for 75A IGBT.
Infineon
Trans IGBT Chip N-CH 650V 60A 185000mW 3Pin(3+Tab) TO-247 Tube
Infineon
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.1V for 75A IGBT.
Infineon
Trans IGBT Chip N-CH 650V 62A 188000mW 3Pin(3+Tab) TO-247 Tube
Infineon
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.1V for 75A IGBT.
Infineon
The reverse conducting TRENCHSTOP™ 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance technology also for cost sensitive customers. WR5 is recommended for use in AC-DC PFC stage in Welding, UPS and Solar.
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