IKW50N65ES5 Datasheet PDF - Infineon

Summary of Features:

● Very low V CE(sat) of 1.35V at 25°C, 20% lower than TRENCHSTOP™ 5 H5

● I C(n)=four times nominal current (100°C T c)

● Soft current fall characteristics with no tail current

● Symmetrical, low voltage overshoot

● Gate voltage under control (no oscillation). No risk of unwanted turn-on of device and no need for gate clamping

● Maximum junction temperature T vj=175°C

● Qualified according to JEDEC standards

●Benefits:

● V CE(peak) clamping circuits not required

● Suitable for use with single turn-on / turn-off gate resistor

● No need for gate clamping components

● Gate drivers with Miller clamping not required

● Reduction in the EMI filtering needed

● Excellent for paralleling