TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Power Dissipation | 428 W |
Breakdown Voltage (Collector to Emitter) | 600 V |
Reverse recovery time | 121 ns |
Input Power (Max) | 428 W |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -40 ℃ |
Power Dissipation (Max) | 428000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Obsolete |
Packaging | Tube |
Operating Temperature | -40℃ ~ 175℃ (TJ) |
IGBT Trench Field Stop 600V 80A 428W Through Hole TO-247-3
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13 Pages / 0.83 MByte
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3 Pages / 0.36 MByte
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14 Pages / 0.83 MByte
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Trans IGBT Chip N-CH 600V 80A 428000mW 3Pin(3+Tab) TO-247 Tube
Infineon
Trans IGBT Chip N-CH 600V 80A 428000mW 3Pin(3+Tab) TO-247 Tube
Infineon
Trans IGBT Chip N-CH 600V 80A 428000mW 3Pin(3+Tab) TO-247 Tube
Infineon
Trans IGBT Chip N-CH 600V 80A 428000mW 3Pin(3+Tab) TO-247 Tube
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Trans IGBT Chip N-CH 600V 80A 428000mW Automotive 3Pin(3+Tab) TO-247 Tube
Infineon
Trans IGBT Chip N-CH 600V 80A 428000mW Automotive 3Pin(3+Tab) TO-247 Tube
Infineon
Trans IGBT Chip N-CH 600V 80A 428000mW 3Pin(3+Tab) TO-247
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