| TYPE | DESCRIPTION |
|---|
| Number of Pins | 4 Pin |
| Case/Package | TO-247-4 |
| Power Rating | 395 W |
| Breakdown Voltage (Collector to Emitter) | 650 V |
| Reverse recovery time | 58 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 395000 mW |
| TYPE | DESCRIPTION |
|---|
| Packaging | Tube |
| Operating Temperature | -40℃ ~ 175℃ (TJ) |
Infineon
16 Pages / 2.11 MByte
Infineon
Igbt 650V 75A 1, 65V To247-4
Infineon
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.1V for 75A IGBT.
Infineon
Igbt 650V 75A 1.65V To247-4
Infineon
Trans IGBT Chip N-CH 650V 90A 395000mW 4Pin(4+Tab) TO-247 Tube
Infineon
Trans IGBT Chip N-CH 650V 90A 395000mW 4Pin(4+Tab) TO-247 Tube
Infineon
TRENCHSTOPTM 5 high speed soft switching IGBT copacked with full current rated RAPID 1 fast and soft antiparallel diode
Infineon
Infineon’s new L5 low saturation voltage (V CE(sat)) TRENCHSTOP™ IGBT family has been specifically optimized for low switching frequencies ranging from 50Hz to 20kHz. Optimization of the carrier profile of the innovative 55µm TRENCHSTOP™ 5 thin wafer technology allows to reduce conduction losses to the intrinsically low level – 1.05V for 30A IGBT and 1.1V for 75A IGBT.
Infineon
TRENCHSTOPTM 5 high speed soft switching IGBT copacked with full current rated RAPID 1 fast and soft antiparallel diode
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