| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Polarity | N-CH |
| Power Dissipation | 32 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 700 V |
| Continuous Drain Current (Ids) | 11.4A |
| Rise Time | 7.5 ns |
| Input Capacitance (Ciss) | 1100pF @100V(Vds) |
| Fall Time | 7 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 32 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.65 mm |
| Size-Width | 4.85 mm |
| Size-Height | 16.15 mm |
| Operating Temperature | -55℃ ~ 150℃ |
Summary of Features:
● 650V technology with integrated fast body diode
● Limited voltage overshoot during hard commutation
● Significant Q g reduction compared to 600V CFD technology
● Tighter R DS(ON) max to R DS(on) typ window
● Easy to design-in
● Lower price compared to 600V CFD technology
●Benefits:
● Low switching losses due to low Q rr at repetitive commutation on body diode
● Self limiting di/dt and dv/dt
● Low Q oss
● Reduced turn on and turn of delay times
● Outstanding CoolMOS™ quality
●Target Applications:
● Telecom
● Server
● Solar
● HID lamp ballast
● LED lighting
● eMobility
Infineon
20 Pages / 3.83 MByte
Infineon
270 Pages / 11.59 MByte
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52 Pages / 3.25 MByte
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37 Pages / 2.01 MByte
Infineon
MOSFET N-CH 650V 11.4A TO220
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