TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.0116 Ω |
Power Dissipation | 55 W |
Threshold Voltage | 2.5 V |
Drain to Source Voltage (Vds) | 30 V |
Rise Time | 107 ns |
Input Capacitance (Ciss) | 1240pF @15V(Vds) |
Input Power (Max) | 55 W |
Fall Time | 51 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 55 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.67 mm |
Size-Width | 4.83 mm |
Size-Height | 9.65 mm |
Operating Temperature | -55℃ ~ 175℃ |
The FDP8880 is a PowerTrench® N-channel MOSFET designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast-switching speed.
● High performance Trench technology for extremely low RDS (ON)
● Low gate charge
● High power and current handling capability
ON Semiconductor
13 Pages / 0.48 MByte
ON Semiconductor
25 Pages / 1.22 MByte
ON Semiconductor
1 Pages / 0.09 MByte
ON Semiconductor
21 Pages / 0.73 MByte
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