| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0023 Ω |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Threshold Voltage | 2 V |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Rise Time | 58 ns |
| Input Capacitance (Ciss) | 11100pF @50V(Vds) |
| Fall Time | 28 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 300000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10 mm |
| Size-Width | 9.25 mm |
| Size-Height | 4.4 mm |
| Operating Temperature | -55℃ ~ 175℃ |
Summary of Features:
● Excellent switching performance
● World’s lowest R DS(on)
● Very low Q g and Q gd
● Excellent gate charge x R DS(on) product (FOM)
● RoHS compliant-halogen free
● MSL1 rated 2
●Benefits:
● Environmentally friendly
● Increased efficiency
● Highest power density
● Less paralleling required
● Smallest board-space consumption
● Easy-to-design products
Infineon
9 Pages / 0.51 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
34 Pages / 2.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
Single N-Channel 100V 2.7mOhm 206NC 300W OptiMOS SMT Mosfet - TO-263-3
Infineon
MOSFET N-CH 100V 120A TO263-3
IFA
N-Channel 100V 2.7mOhm OptiMOS™3 Power-Transistor - PG-TO-263-3
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
