| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 110 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.29 Ω |
| Polarity | P-Channel |
| Power Dissipation | 110 W |
| Drain to Source Voltage (Vds) | 150 V |
| Continuous Drain Current (Ids) | 13A |
| Rise Time | 36 ns |
| Input Capacitance (Ciss) | 860pF @25V(Vds) |
| Fall Time | 37 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 110W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Size-Length | 10.66 mm |
| Size-Width | 4.82 mm |
| Size-Height | 16.51 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The AUIRF6215 is a HEXFET® single P-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized design, provides an extremely efficient and reliable operation.
● Advanced planar technology
● Dynamic dV/dt rating
● Fully avalanche rating
● Repetitive avalanche allowed up to Tjmax
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