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IPB042N10N3 G E8187
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IPB042N10N3 G E8187 Datasheet PDF - Infineon

Manufacturer:Infineon
Category:MOSFETs
Case Package:TO-263-3
Description:MOSFET N-CH 100V 100A TO263-3
Documentation:IPB042N10N3 G E8187 Datasheet (12 Pages)
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IPB042N10N3 G E8187 Datasheet PDF (12 Pages)
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IPB042N10N3 G E8187 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Case/PackageTO-263-3
Number of Channels1 Channel
Drain to Source Resistance (on) (Rds)3.6 mΩ
Power Dissipation214 W
Threshold Voltage2 V
Drain to Source Voltage (Vds)100 V
Breakdown Voltage (Drain to Source)100 V
Rise Time59 ns
Input Capacitance (Ciss)8410pF @50V(Vds)
Input Power (Max)214 W
Fall Time14 ns
Operating Temperature (Max)175 ℃
Operating Temperature (Min)55 ℃
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IPB042N10N3 G E8187 Size & Package

TYPEDESCRIPTION
PackagingTape & Reel (TR)
Size-Length10 mm
Size-Width9.25 mm
Size-Height4.4 mm
Operating Temperature-55℃ ~ 175℃
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IPB042N10N3 G E8187 Documents

IPB042N10N3 G E8187 Datasheet
Infineon
12 Pages / 0.51 MByte

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