| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Power Rating | 300 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0058 Ω |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 150 V |
| Continuous Drain Current (Ids) | 100A |
| Rise Time | 35 ns |
| Input Capacitance (Ciss) | 5470pF @75V(Vds) |
| Fall Time | 14 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.31 mm |
| Size-Width | 9.45 mm |
| Size-Height | 4.57 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The IPB072N15N3 G is an OptiMOS™ 3 N-channel Power Transistor with low resistance, excellent switching performance, increased efficiency, excellent gate charge x R DS (ON) product (FOM) and smallest board-space consumption.
● Environment-friendly
● High power density
● Smallest board-space consumption
● Easy-to-design
Infineon
11 Pages / 0.72 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
40 Pages / 0.46 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
MOSFET N-CH 150V 100A TO263-3
Infineon
Trans MOSFET N-CH 150V 100A 3Pin TO-263 T/R
Infineon
MOSFET N-CH 150V 100A TO263-3
Infineon
MOSFET N-Ch 150V 100A D2PAK-2
Infineon
MOS Power Transistors LV (< 200V)
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
