| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 187 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 38 ns |
| Input Power (Max) | 187 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 187 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.13 mm |
| Size-Width | 5.21 mm |
| Size-Height | 21.1 mm |
| Operating Temperature | -40℃ ~ 175℃ (TJ) |
The IKW30N60H3 is a 600V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switching behaviour and thus leading to low turn off losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
● Low switching losses for high efficiency
● Fast switching behaviour with low EMI emissions
● Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
● Short circuit capability
● Excellent performance
● Low switching and conduction losses
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