| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Voltage Rating (DC) | 5.00 V |
| Case/Package | Side-Looking |
| Rise/Fall Time | 15 ns |
| Output Current | ≤6.50 mA |
| Number of Channels | 1 Channel |
| Number of Positions | 2 Position |
| Wavelength | 935 nm |
| Viewing Angle | 50° |
| Peak Wavelength | 880 nm |
| Polarity | NPN |
| Power Dissipation | 100 mW |
| Power Consumption | 100 mW |
| Rise Time | 15000 ns |
| Breakdown Voltage (Collector to Emitter) | 30 V |
| Input Power (Max) | 100 mW |
| Fall Time | 15 µs |
| Fall Time (Max) | 15000 ns |
| Fall Time (Max) | 15000 ns |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 100 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Color | Infrared |
| Material | Silicon |
| Size-Length | 4.45 mm |
| Size-Width | 2.28 mm |
| Size-Height | 5.72 mm |
| Lead Length | 0.5 in |
| Operating Temperature | -40℃ ~ 85℃ |
The SDP8406-003 is a Silicon NPN Phototransistor moulded in side-looking clear plastic package. The chip is positioned to accept radiation through a plastic lens from the side of the package.
● 50° Acceptance angle (nominal)
● Wide sensitivity ranges
● Mechanically and spectrally matched to SEP8506 and SEP8706 infrared emitting diodes
Honeywell
4 Pages / 0.4 MByte
Honeywell
18 Pages / 0.95 MByte
Honeywell
24 Pages / 1.44 MByte
Honeywell
2 Pages / 0.02 MByte
Honeywell
3 Pages / 0.63 MByte
Honeywell
4 Pages / 0.44 MByte
Honeywell
1 Pages / 0.16 MByte
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
