| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 2 Pin |
| Case/Package | TO-220-2 |
| Forward Voltage | 1.9 V |
| Thermal Resistance | 5.5 ℃/W |
| Reverse recovery time | 0 ns |
| Forward Current | 4 A |
| Maximum Forward Voltage (Max) | 1.9V @4A |
| Forward Current (Max) | 4 A |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Junction Temperature (Max) | 175 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
●ST SiC diodes will boost the performance of PFC operations in hard switching conditions.
●Key Features
● No or negligible reverse recovery
● Switching behavior independent of temperature
● Dedicated to PFC boost diode
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