| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | PG-TDSON-8 |
| Power Rating | 139 W |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0023 Ω |
| Polarity | N-Channel |
| Power Dissipation | 139 W |
| Threshold Voltage | 1.7 V |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 23A |
| Rise Time | 17 ns |
| Input Capacitance (Ciss) | 13000pF @30V(Vds) |
| Input Power (Max) | 139 W |
| Fall Time | 19 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta), 139W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5.35 mm |
| Size-Width | 6.1 mm |
| Size-Height | 1.1 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The BSC028N06LS3 G is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. The MOSFET features 40% lower RDS (on) than alternative devices. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
● Highest system efficiency
● Less paralleling required
● Increased power density
● Saving space
● Very low voltage overshoot
● Superior thermal resistance
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