| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-3 |
| Power Rating | 300 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0096 Ω |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 88A |
| Rise Time | 26 ns |
| Input Capacitance (Ciss) | 5340pF @100V(Vds) |
| Fall Time | 11 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.31 mm |
| Size-Width | 9.45 mm |
| Size-Height | 4.57 mm |
| Operating Temperature | -55℃ ~ 175℃ |
The IPB107N20N3 G is a 200V N-channel Power MOSFET ideally suited for high-frequency switching, achieving excellent performance in applications such as synchronous rectification for AC-DC SMPS and motor control. The OptiMOS™ MOSFET is optimized for hard commutation ruggedness, achieving low Qrr and lower peak reverse recovery charges. It is performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.
● Highest efficiency
● Highest power density
● Lowest board space consumption
● Minimal device paralleling required
● System cost improvement
● Environmentally-friendly
● Easy to design in
Infineon
11 Pages / 0.67 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
40 Pages / 0.46 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
1 Pages / 0.13 MByte
Infineon
Trans MOSFET N-CH 200V 88A 3Pin(2+Tab) TO-263
Infineon
MOSFET N-CH 200V 88A TO263-3
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
