| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Power Rating | 300 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0099 Ω |
| Polarity | N-Channel |
| Power Dissipation | 300 W |
| Threshold Voltage | 3 V |
| Input Capacitance | 5340 pF |
| Drain to Source Voltage (Vds) | 200 V |
| Continuous Drain Current (Ids) | 88A |
| Rise Time | 26 ns |
| Input Capacitance (Ciss) | 5340pF @100V(Vds) |
| Fall Time | 11 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 300 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.36 mm |
| Size-Width | 4.4 mm |
| Size-Height | 9.45 mm |
The IPP110N20N3 G is a 200V N-channel Power MOSFET ideally suited for high-frequency switching, achieving excellent performance in applications such as synchronous rectification for AC-DC SMPS and motor control. The OptiMOS™ MOSFET is optimized for hard commutation ruggedness, achieving low Qrr and lower peak reverse recovery charges. It is performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.
● Highest efficiency
● Highest power density
● Lowest board space consumption
● Minimal device paralleling required
● System cost improvement
● Environmentally-friendly
● Easy to design in
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11 Pages / 0.67 MByte
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30 Pages / 0.64 MByte
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Trans MOSFET N-CH 200V 88A 3Pin TO-220 Tube
Infineon
Power Field-Effect Transistor, 88A I(D), 200V, 0.011Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3Pin
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