TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Case/Package | TO-263-3 |
Number of Channels | 1 Channel |
Drain to Source Resistance (on) (Rds) | 58 mΩ |
Polarity | N-CH |
Power Dissipation | 171 W |
Threshold Voltage | 3 V |
Drain to Source Voltage (Vds) | 650 V |
Breakdown Voltage (Drain to Source) | 650 V |
Continuous Drain Current (Ids) | 33A |
Rise Time | 14 ns |
Fall Time | 7 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | 55 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 10 mm |
Size-Width | 9.25 mm |
Size-Height | 4.4 mm |
Operating Temperature | -55℃ ~ 150℃ |
Summary of Features:
● 650V voltage
● Revolutionary best-in-class R DS(on)/package
● Reduced energy stored in output capacitance (Eoss)
● Lower gate charge Qg
● Space saving through use of smaller packages or reduction of parts
● 12 years manufacturing experience in superjunction technology
●Benefits:
● Improved safety margin and suitable for both SMPS and solar inverter applications
● Lowest conduction losses/package
● Low switching losses
● Better light load efficiency
● Increasing power density
● Outstanding CoolMOS™ quality
●Target Applications:
● Telecom
● Server
● Solar
● PC power
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