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IPD053N08N3GBTMA1
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IPD053N08N3GBTMA1 Datasheet PDF - Infineon

Manufacturer:Infineon
Category:MOSFETs
Case Package:TO-252-3
Description:DPAK N-CH 80V 90A
Documentation:IPD053N08N3GBTMA1 Datasheet (9 Pages)IPD053N08N3GBTMA1 User Reference Manual Guide (3 Pages)
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IPD053N08N3GBTMA1 Datasheet PDF (9 Pages)
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IPD053N08N3GBTMA1 Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageTO-252-3
Number of Channels1 Channel
Drain to Source Resistance (on) (Rds)4.4 mΩ
PolarityN-Channel
Power Dissipation150 W
Threshold Voltage2 V
Drain to Source Voltage (Vds)80 V
Breakdown Voltage (Drain to Source)80 V
Continuous Drain Current (Ids)90A
Rise Time66 ns
Input Capacitance (Ciss)4750pF @40V(Vds)
Fall Time10 ns
Operating Temperature (Max)175 ℃
Operating Temperature (Min)55 ℃
Power Dissipation (Max)150W (Tc)
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IPD053N08N3GBTMA1 Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusObsolete
PackagingTape & Reel (TR)
Size-Length6.5 mm
Size-Width6.22 mm
Size-Height2.3 mm
Operating Temperature-55℃ ~ 175℃ (TJ)
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IPD053N08N3GBTMA1 Documents

IPD053N08N3GBTMA1 Datasheet
Infineon
9 Pages / 0.33 MByte
IPD053N08N3GBTMA1 User Reference Manual Guide
Infineon
3 Pages / 0.36 MByte
IPD053N08N3GBTMA1 Other Datasheet PDF
Infineon
16 Pages / 0.37 MByte

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IPD053N08N3GBTMA1 Datasheet PDF
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DPAK N-CH 80V 90A
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