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IPD200N15N3 G
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IPD200N15N3 G Datasheet PDF - Infineon

Manufacturer:Infineon
Category:MOSFETs
Case Package:TO-252-3
Description:The IPD200N15N3 G is a 150V N-channel Power MOSFET that achieves a reduction in RDS (on) of 40% and of 45% in Figure of Merit (FOM). The OptiMOS™ MOSFET offers high system efficiency and industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
Documentation:IPD200N15N3 G Datasheet (12 Pages)IPD200N15N3 G User Reference Manual Guide (270 Pages)IPD200N15N3 G Application Note (37 Pages)
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IPD200N15N3 G Datasheet PDF (12 Pages)
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IPD200N15N3 G Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageTO-252-3
Number of Positions3 Position
Drain to Source Resistance (on) (Rds)16 mΩ
PolarityN-Channel
Power Dissipation150 W
Threshold Voltage3 V
Drain to Source Voltage (Vds)150 V
Rise Time11 ns
Input Capacitance (Ciss)1820pF @75V(Vds)
Fall Time6 ns
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)150 W
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IPD200N15N3 G Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)
Size-Length6.73 mm
Size-Width6.22 mm
Size-Height2.41 mm
Operating Temperature-55℃ ~ 175℃
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IPD200N15N3 G Documents

IPD200N15N3 G Datasheet
Infineon
12 Pages / 0.97 MByte
IPD200N15N3 G User Reference Manual Guide
Infineon
270 Pages / 11.59 MByte
IPD200N15N3 G Other Datasheet PDF
Infineon
30 Pages / 0.64 MByte
IPD200N15N3 G Application Note
Infineon
37 Pages / 2.01 MByte
IPD200N15N3 G Notice File
Infineon
5 Pages / 0.05 MByte

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IPD200N15N3 G Datasheet PDF
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The IPD200N15N3 G is a 150V N-channel Power MOSFET that achieves a reduction in RDS (on) of 40% and of 45% in Figure of Merit (FOM). The OptiMOS™ MOSFET offers high system efficiency and industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
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