TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Case/Package | TO-252-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.0258 Ω |
Polarity | N-Channel |
Power Dissipation | 57 W |
Threshold Voltage | 1.7 V |
Drain to Source Voltage (Vds) | 100 V |
Continuous Drain Current (Ids) | 30A |
Rise Time | 4 ns |
Input Capacitance (Ciss) | 1976pF @25V(Vds) |
Input Power (Max) | 57 W |
Fall Time | 3 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 57W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 6.5 mm |
Size-Width | 6.22 mm |
Size-Height | 2.3 mm |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
Summary of Features:
● N-channel - Enhancement mode
● Automotive AEC Q101 qualified
● MSL1 up to 260°C peak reflow
● 175°C operating temperature
● Green product (RoHS compliant)
● 100% Avalanche tested
●Benefits:
● highest current capability 180A
● low switching and conduction power losses for high thermal efficiency
● robust packages with superior quality and reliability
● optimized total gate charge enables smaller driver output stages
Infineon
9 Pages / 0.17 MByte
Infineon
138 Pages / 12.05 MByte
Infineon
28 Pages / 4.06 MByte
Infineon
56 Pages / 6.94 MByte
IFC
N-Channel 100V 31mΩ 24NC Surface Mount OptiMOS®-T Power-Transistor -TO-252
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