TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 60.0 V |
Current Rating | 29.0 A |
Case/Package | TO-252-3 |
Number of Channels | 1 Channel |
Drain to Source Resistance (on) (Rds) | 35 mΩ |
Power Dissipation | 68 W |
Input Capacitance | 800 pF |
Gate Charge | 13.0 nC |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | 60 V |
Continuous Drain Current (Ids) | 29.0 A |
Rise Time | 21 ns |
Input Capacitance (Ciss) | 600pF @30V(Vds) |
Input Power (Max) | 68 W |
Fall Time | 20 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 68 W |
TYPE | DESCRIPTION |
---|
Packaging | Tape & Reel (TR) |
Size-Length | 6.5 mm |
Size-Width | 6.22 mm |
Size-Height | 2.3 mm |
Operating Temperature | -55℃ ~ 175℃ |
Infineon
9 Pages / 0.98 MByte
Infineon
9 Pages / 0.99 MByte
Infineon
Trans MOSFET N-CH 60V 29A 3Pin(2+Tab) DPAK
Infineon
Power Field-Effect Transistor, 29A I(D), 60V, 0.035Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3Pin
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