| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Rating | 28 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.168 Ω |
| Polarity | N-Channel |
| Power Dissipation | 72 W |
| Threshold Voltage | 3.5 V |
| Drain to Source Voltage (Vds) | 650 V |
| Continuous Drain Current (Ids) | 13A |
| Rise Time | 11 ns |
| Input Capacitance (Ciss) | 1150pF @400V(Vds) |
| Fall Time | 9 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 72W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IPD65R190C7 is a 650V N-channel CoolMOS™ Power MOSFET providing the world"s lowest RDS (on) with low switching losses and efficiency improvements over the full load range. The new CoolMOS™ C7 series offers a ~50% reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP, offering a GaN-like level of performance in PFC, TTF and other hard-switching topologies. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
● Reduced energy stored in output capacitance (Eoss)
● Lower gate charge
● Space-saving through reduction of parts
● Improved safety margin
● Lowest conduction losses
● Low switching losses
● Better light load efficiency
● Increasing power density
Infineon
15 Pages / 1.83 MByte
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270 Pages / 11.59 MByte
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40 Pages / 0.46 MByte
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37 Pages / 2.01 MByte
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