The IPD65R380C6 is a 650V CoolMOS™ C6 N-channel Power MOSFET features lower gate charge. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C6 combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered device provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
● Extremely low losses due to very low figure of merit (RDS (ON) x Qg and EOSS)
● Very high commutation ruggedness
● Easy to use
● Better light load efficiency
● Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness
● Better performance in comparison to previous CoolMOS™ generations
● More efficient, more compact, lighter and cooler
● Improved power density
● Improved reliability
● General purpose part can be used in both soft and hard switching topologies
● Improved efficiency in hard switching applications
● Reduces possible ringing due to PCB layout and package parasitic effects
●For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
