| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.0031 Ω |
| Polarity | N-Channel |
| Power Dissipation | 214 W |
| Threshold Voltage | 2.8 V |
| Drain to Source Voltage (Vds) | 80 V |
| Rise Time | 79 ns |
| Input Capacitance (Ciss) | 8110pF @40V(Vds) |
| Input Power (Max) | 214 W |
| Fall Time | 14 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 214000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ |
The IPP037N08N3 G is a 80V N-channel Power MOSFET that offers highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). The OptiMOS™ MOSFET offers industry"s lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
● Dual sided cooling
● Low parasitic inductance
● Low profile (<0.7mm)
● Reduced switching and conduction losses
● Superior thermal resistance
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