| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 3 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 100 V |
| Current Rating | 25.0 A |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 125 W |
| Breakdown Voltage (Collector to Emitter) | 100 V |
| Continuous Collector Current | 25A |
| hFE Min | 10 @15A, 4V |
| Input Power (Max) | 125 W |
| DC Current Gain (hFE) | 25 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 125000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -65℃ ~ 150℃ |
Description
●The dev ice i s a s ilicon E pitaxial-Base NPN transistor mounted i n TO-247 plastic pac kage. It is i ntentend for u se i n p ower am plifier and switching applications. The complementary PNP type is TIP36CW.
●Features
●■ STMicroelectronics PREFERRED SALESTYPES
ST Microelectronics
9 Pages / 0.18 MByte
ST Microelectronics
9 Pages / 0.98 MByte
ST Microelectronics
30 Pages / 0.31 MByte
ST Microelectronics
1 Pages / 0.13 MByte
ON Semiconductor
25 A, 100 V NPN Bipolar Power Transistor, TO-247, 30-TUBE
ST Microelectronics
25A, 40V, NPN, Si, POWER TRANSISTOR, TO-218
KEC(Korea Electronics)
Power Bipolar Transistor, 25A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P(N), 3 PIN
Microsemi
Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-254AA, Metal, 3 Pin, TO-254, 3 PIN
Advanced Semiconductor
Power Bipolar Transistor, 25A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-247, Plastic/Epoxy, 3 Pin, TO-247, 3 PIN
Mospec
POWER TRANSISTORS(25A,40-100V,125W)
Central Semiconductor
COMPLEMENTARY SILICON POWER TRANSISTORS
TI
25A, 40V, NPN, Si, POWER TRANSISTOR
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
