TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Number of Channels | 1 Channel |
Drain to Source Resistance (on) (Rds) | 110 mΩ |
Polarity | N-CH |
Power Dissipation | 277.8 W |
Drain to Source Voltage (Vds) | 700 V |
Breakdown Voltage (Drain to Source) | 650 V |
Continuous Drain Current (Ids) | 31.2A |
Rise Time | 11 ns |
Input Capacitance (Ciss) | 3240pF @100V(Vds) |
Fall Time | 6 nS |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 277.8 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10 mm |
Size-Width | 4.4 mm |
Size-Height | 15.65 mm |
Operating Temperature | -55℃ ~ 150℃ |
Summary of Features:
● 650V technology with integrated fast body diode
● Limited voltage overshoot during hard commutation
● Significant Q g reduction compared to 600V CFD technology
● Tighter R DS(ON) max to R DS(on) typ window
● Easy to design-in
● Lower price compared to 600V CFD technology
●Benefits:
● Low switching losses due to low Q rr at repetitive commutation on body diode
● Self limiting di/dt and dv/dt
● Low Q oss
● Reduced turn on and turn of delay times
● Outstanding CoolMOS™ quality
●Target Applications:
● Telecom
● Server
● Solar
● HID lamp ballast
● LED lighting
● eMobility
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