TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-251 |
Power Rating | 66 W |
Polarity | N-CH |
Drain to Source Voltage (Vds) | 500 V |
Continuous Drain Current (Ids) | 7.1A |
Rise Time | 14 ns |
Input Capacitance (Ciss) | 680pF @100V(Vds) |
Fall Time | 17 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 66000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Not Recommended for New Designs |
Packaging | Tube |
Summary of Features:
● Lowest figure of merit R on x Q g
● Ultra low gate charge
● Extreme dv/dt rate
● Ultra low R DS(on), ultra low gate charge, very fast switching
● V th 3 V, g fs very high, internal R g very low
● High current capability
● Significant reduction of conduction and switching losses
● High power density and efficiency for superior power conversion systems
● Best-in-class price/performance ratio
●Target Applications:
● Solar
● Server
● Telecom
● Consumer
● Adapter
● PC power
Infineon
10 Pages / 0.72 MByte
Infineon
270 Pages / 11.59 MByte
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33 Pages / 1.03 MByte
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37 Pages / 2.01 MByte
Infineon
Transistor: N-MOSFET; unipolar; 500V; 7.1A; 66W; IPAK; CoolMOS™
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