| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247 |
| Power Rating | 192 W |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.13 Ω |
| Polarity | N-Channel |
| Power Dissipation | 192 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 550 V |
| Continuous Drain Current (Ids) | 23.0 A |
| Rise Time | 14 ns |
| Input Capacitance (Ciss) | 2540pF @100V(Vds) |
| Fall Time | 8 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 192000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.13 mm |
| Size-Width | 5.21 mm |
| Size-Height | 21.1 mm |
The IPW50R140CP is a CoolMOS™ N-channel Power MOSFET with ultra-low gate charge and high peak current capability.
● Lowest figure of merit Ron x Qg
● Extreme dV/dt rate
● Ultra low RDS (ON), very fast switching
● Very low internal Rg
● High peak current capability
● Significant reduction of conduction and switching losses
● High power density and efficiency for superior power conversion systems
● Best-in-class performance ratio
● Qualified according to JEDEC for target applications
● Green device
Infineon
11 Pages / 0.64 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
33 Pages / 1.03 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
1 Pages / 0.13 MByte
IFC
N-Channel 550V 140mΩ 48NC Flange Mount CoolMOS Mosfet - TO-247
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